Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby,申请号AU20090228841-传众专利搜索

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发明名称	Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby
摘要
申请公布号	AU2009228841(A1)	申请公布日期	2009.10.01
申请号	AU20090228841	申请日期	2009.03.12
申请人	SEMISOUTH LABORATORIES, INC.	发明人	JIE ZHANG
分类号	C30B23/06;C30B29/36	主分类号	C30B23/06
代理机构		代理人
主权项
地址

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