| 摘要 |
PURPOSE: A method of repairing of the semiconductor device is provided to improve the repair efficiency of the semiconductor device by controlling the thickness of the insulating layer. CONSTITUTION: The method of repairing of the semiconductor device comprises as follows. The fuse(108) which includes the laminating structure of the conductive film(104) for a fuse and barrier film(106) is formed at the upper part of the semiconductor substrate(100). The first insulating layer(110) is formed to covers a fuse. The trench(T) for a repair is formed by etching the barrier film to expose the first insulating layers. The second insulating layer(114) is formed on the first insulating layers defined by the exposed barrier film and the trench for a repair.
|
