| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents a crack from occurring in an electrode layer exposed through a through-hole which is formed in a semiconductor substrate, and to provide a method of manufacturing the same. <P>SOLUTION: A through-via 22 and an opening 16A in a passivation film 16 are disposed so that an opening diameter of the through-via 22 is larger than an opening diameter of the opening 16A of the passivation film 16 while an opening edge of the through-via 22 is located outside an opening edge of the opening 16A of the passivation film 16. Alternatively, the through-via 22 and the opening 16A of the passivation film 16 are disposed so that the opening edge of the through-via 22 is disposed at a location which does not overlap with the opening edge (an opening edge of a portion in contact with a pad electrode 14) of the opening 16A of the passivation film 16. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
