| 摘要 |
In a memory cell, a margin for data preservation is provided while suppressing a current consumption associated with a low-power consumption mode. A MOS transistor has the same structure as NMOS transistors included in each of memory cells. When a low-power consumption mode is designated, a voltage developed at a node is stabilized by subtracting a margin voltage for data preservation across a first resistor from a voltage applied to a first node and by subtracting a threshold voltage of the MOS transistor from the resultant voltage is applied to a second node.
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