PROCESS FOR PRODUCING SEMICONDUCTOR PORCELAIN COMPOSITION/ELECTRODE ASSEMBLY

摘要

A semiconductor porcelain composition/electrode assembly which includes the semiconductor porcelain composition proposed by the inventors, in which part of the Ba of BaTiO3 has been replaced with Bi-Na and which has a p-type semiconductor at crystal grain boundaries. The assembly has a room-temperature resistivity as low as 100 O cm or below and has been reduced in resistivity change with time and with voltage application. Also provided is a process for producing a semiconductor porcelain composition/electrode assembly comprising: a semiconductor porcelain composition in which part of the Ba of BaTiO3 has been replaced with Bi-Na and which has a p-type semiconductor at crystal grain boundaries; and electrodes bonded to the composition. The process includes conducting, after electrode bonding, a heat treatment at 100-600°C for 0.5-24 hours.