发明名称 THIN FILM TRANSISTOR SUBSTRATE
摘要 In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 mum or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.
申请公布号 US2009242886(A1) 申请公布日期 2009.10.01
申请号 US20090411799 申请日期 2009.03.26
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 ITOH YASUYOSHI;MASUTANI YUICHI;AOKI MASARU
分类号 H01L29/04 主分类号 H01L29/04
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