PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A phase-change random access memory device and method of manufacturing the same are provided to improve the resistance characteristic of the PN diode. CONSTITUTION: The phase change memory device includes the semiconductor substrate(20), the interlayer insulating film(22), and the PN diode. The semiconductor substrate has the first conductivity type impurity region(21). The interlayer insulating film has the contact hole for which an actuator exposes the first conductivity type impurity region on the semiconductor substrate. The PN diode is formed within the contact hole. The PN diode includes the silicon selective epitaxial growth layer(24) of the first conductivity type, and the silicon - germanium SEG layer(25) of the second conductive types. The silicon selective epitaxial growth layer of the first conductivity type is formed in upper part of the first conductivity type impurity region. The silicon - germanium SEG layer of the second conductive types is formed in upper part of the silicon selective epitaxial growth layer of the first conductivity type.