发明名称 MEMORY CONTROL CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a memory control circuit, which increases access speed to a memory and suppresses increase of a mounting area. SOLUTION: The memory control circuit includes: a serial data processing circuit which performs serial access, receives first access data for accessing a parallel-access memory by using a terminal used for serial access, and which serially outputs first access data; a parallel data processing circuit to receive second access data and outputs the second access data in parallel; and a selection circuit which, if a first instruction signal for instructing serial access is input, outputs the first access data from the serial data processing circuit in serial to a serial-access memory, and if a second instruction signal for instructing parallel access is input, outputs the second access data from the parallel data processing circuit in parallel to a parallel-access memory. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009223424(A) 申请公布日期 2009.10.01
申请号 JP20080064675 申请日期 2008.03.13
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 SASAKI TERU;ARAI YOSHIMASA;FUJIWARA RYOJI
分类号 G06F12/04 主分类号 G06F12/04
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