发明名称 |
METHOD FOR PATTERNING A METALLIZATION LAYER BY REDUCING RESIST STRIP INDUCED DAMAGE OF THE DIELECTRIC MATERIAL |
摘要 |
By forming a hardmask layer in combination with one or more cap layers, undue exposure of a sensitive dielectric material to resist stripping etch ambients may be reduced and integrity of the hardmask may also be maintained so that the trench etch process may be performed with a high degree of etch selectivity during the patterning of openings in a metallization layer of a semiconductor device.
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申请公布号 |
US2009246951(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20090354884 |
申请日期 |
2009.01.16 |
申请人 |
FEUSTEL FRANK;WERNER THOMAS;BOEMMELS JUERGEN |
发明人 |
FEUSTEL FRANK;WERNER THOMAS;BOEMMELS JUERGEN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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