发明名称 |
Schottky Barrier Diode and Method for Using the Same |
摘要 |
An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film.
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申请公布号 |
US2009243026(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20060094922 |
申请日期 |
2006.11.22 |
申请人 |
CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY |
发明人 |
NAKAMURA TOMONORI;TSUCHIDA HIDEKAZU;MIYANAGI TOSHIYUKI |
分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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