发明名称 |
MULTI-LAYER MAGNETIC RANDOM ACCESS MEMORY USING SPIN-TORQUE MAGNETIC TUNNEL JUNCTIONS AND METHOD FOR WRITE STATE OF THE MULTI-LAYER MAGNETIC RANDOM ACCESS MEMORY |
摘要 |
A stacked magnetic tunnel junction (MTJ) structure of a multi-layer magnetic random access memory (MRAM) which includes a plurality of stacked MTJ devices serially connected to each other and an access transistor shared between the stacked MTJ devices. The stacked MTJ structure further includes a write word line through which a write current flows. The write current generates a hard axis magnetic field used to selectively write an MTJ device of the stacked MTJ devices.
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申请公布号 |
US2009244965(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20080059504 |
申请日期 |
2008.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
REOHR WILLIAM R. |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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