METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent distribution of boron due to long thermal treatment. CONSTITUTION: A method of manufacturing a semiconductor device is comprised of the steps: forming a gate(116) on a semiconductor substrate(100); forming a spacer on the both sidewall of the gate; forming a capping layer(122) on the gate and the semiconductor substrate including a spacer; forming the insulating layer(124) on the semiconductor substrate in which the gate is formed; and performing a thermal treatment of the insulating layer in a laser mode.