METHOD FOR FORMING COBALT SILICIDE USING OXYNITRIDE

摘要

PURPOSE: A method for forming cobalt silicide using oxynitride is provided to perform the repetitive process for forming the thick cobalt silicide using the nitride oxide film as the buffer layer. CONSTITUTION: The method for forming cobalt silicide using the nitride oxide film comprises as follows. The nitride oxide film(200) is formed on the single crystalline silicon substrate(100). The cobalt film(300) is formed by depositing the cobalt on the nitride oxide film. The porous silica is chemically grown on the silicon substrate. The nitrogen is doped within the oxide film by using plasma processed N2 or the NH3 gas.