| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the performance of a nonvolatile semiconductor storage device. <P>SOLUTION: In the nonvolatile semiconductor storage device having a split-gate memory cell M1A including a control gate electrode CGs and a sidewall memory gate electrode MGs and a single-gate memory cell M2 including a single memory gate electrode MGu on the same silicon substrate 1, the control gate electrode CGs is formed in a first region R1 via a control gate insulating film ICs, the sidewall memory gate electrode MGs is formed in the first region R1 via a charge trapping film IMs, and at the same time, a single memory gate electrode MGu is formed in a second region R2 via a charge trapping film Mu. At this time, the sidewall memory gate electrode MGs and the single memory gate electrode MGu are formed in the same process, and the control gate electrode CGs and the sidewall memory gate electrode MGs are formed so as to be adjacently disposed to each other in a state of being electrically isolated from each other. <P>COPYRIGHT: (C)2010,JPO&INPIT |
