DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a technology for reducing a forward voltage drop across a diode having both p-type semiconductor regions and an n-type semiconductor region at a surface layer portion of a semiconductor layer. SOLUTION: The semiconductor layer 3 having a plurality of grooves 2 formed on a surface 6a has the p-type semiconductor regions 40, the n-type semiconductor region 30 formed in a region enclosing the p-type semiconductor region, and an n+-type cathode region 20. The p-type semiconductor regions 40 are exposed on bottom surfaces 6c of the grooves 2. Ohmic electrodes 51 are formed within ranges of the bottom surfaces 6c of the grooves 2 to form ohmic junctions J1 with the p-type semiconductor regions 40. A Schottky electrode 53 is formed in an exposure range on a top surface side including side surfaces 6 of the grooves 2 to form a Schottky junction J2 with the n-type semiconductor region 30. A cathode electrode 10 is formed in an exposure range on a reverse surface side of the cathode region 20 to form an ohmic junction J1 with the cathode region 20. COPYRIGHT: (C)2010,JPO&INPIT