| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI substrate which efficiently removes an ion implantation defect layer present in an ion-implantation layer near a flaked face flaked by an ion-implantation flaking method, obtains film thickness uniformity between substrates and in the surface of the substrate, and is also applied to the SOI substrate which uses low melting point material for a handle wafer. SOLUTION: The method of manufacturing an SOI wafer includes the steps of: providing a laminated substrate having a silicon wafer in which an ion-implanted layer has been formed by implanting a hydrogen ion, a rare gas ion, or both the hydrogen ion and the rare gas ion, and the handle wafer stacked on the silicon wafer; performing peeling along the ion-implanted layer to transfer the silicon wafer onto the handle wafer; and performing anneal by irradiating the peeled surface of transferred silicon wafer with a pulsating laser beam. COPYRIGHT: (C)2010,JPO&INPIT
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