发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.
申请公布号 US2009243653(A1) 申请公布日期 2009.10.01
申请号 US20090408953 申请日期 2009.03.23
申请人 INOKUCHI TOMOAKI;ISHIKAWA MIZUE;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI 发明人 INOKUCHI TOMOAKI;ISHIKAWA MIZUE;SUGIYAMA HIDEYUKI;SAITO YOSHIAKI
分类号 H03K19/173;G11C11/14 主分类号 H03K19/173
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