| 摘要 |
Tunnel dielectrics for semiconductor devices are generally described. In one example, an apparatus includes a semiconductor substrate, a first tunnel dielectric having a first bandgap coupled to the semiconductor substrate, a second tunnel dielectric having a second bandgap coupled to the first tunnel dielectric, and a third tunnel dielectric having a third bandgap coupled to the second tunnel dielectric wherein the second bandgap is relatively smaller than the first bandgap and the third bandgap.
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