| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermoelectric conversion temperature sensor using a thermoelectric conversion semiconductor providing electromotive force suitable for temperature detection. SOLUTION: The area (second area) of a junction surface 9 between an N-type thermoelectric conversion semiconductor 2 and a P-type thermoelectric conversion semiconductor 3 following the area (first area) of a junction surface 8 between a P-type thermoelectric conversion semiconductor 1 and the N-type thermoelectric conversion semiconductor 2, is made smaller than the area (first area) of a junction surface 8, whereby conduction of heat from the outside P-type thermoelectric conversion semiconductor 1 to the inside-type thermoelectric conversion semiconductor 3 is made fast. COPYRIGHT: (C)2010,JPO&INPIT |
