ION IMPLANTATION DISTRIBUTION GENERATING METHOD, AND SIMULATOR

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation distribution generating method and a simulator, wherein a computation time is shortened by effectively using approximation. SOLUTION: In the ion implantation generating method, a projection (Rp(E))(2)taking into consideration up to a secondary term of a projection Rpof a range of an ion implanted in a semiconductor is obtained by using a secondary perturbation model using an approximation expression of (Rp(E))(2)=(Rp(E))(1)+Δp(2)(E) by using a perturbation term Δp(2) when a known projection taking up to a primary term into consideration is denoted as (Rp(E))(1). COPYRIGHT: (C)2010,JPO&INPIT