发明名称 PLASMA TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment method for presuming conditions for plasma treatment by forming a treatment trace in a part of a workpiece when subjecting the work to plasma treatment and by detecting the treatment trace. Ž<P>SOLUTION: This plasma treatment method for subjecting the whole surface of an effective region 101a to an etching process comprises: [1] a preparation process for placing a workpiece 10 in a placing part of a plasma treatment apparatus; [2] a first treatment trace forming process for forming a treatment trace 110 in a non-effective region 101b of the workpiece 10; [3] a main treatment process for subjecting an effective region 101a to plasma treatment; and [4] a second treatment trace forming process for forming a treatment trace 120 in the non-effective region 101b. Since etching conditions for forming the treatment traces 110, 120 are calculated from the depth of depressions of the treatment traces 110, 120, the etching conditions for the present treatment are presumed by this calculation. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009224613(A) 申请公布日期 2009.10.01
申请号 JP20080068428 申请日期 2008.03.17
申请人 EPSON TOYOCOM CORP 发明人 MURAKAMI SHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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