| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a laminated nonvolatile semiconductor storage device of stable operation, and to provide a method of manufacturing the same. Ž<P>SOLUTION: The nonvolatile semiconductor storage device includes: a memory cell area in which a plurality of electrically rewritable memory cells are formed; and a peripheral circuit area in which transistors that configure peripheral circuits to control the memory cells are formed. In the memory cell area, a source-side selective transistor layer 20, a memory transistor layer 30 and a drain-side selective transistor layer 40 are laminated in a vertical direction to a semiconductor substrate 11. A block insulating layer (first insulating layer) 35, a charge storage layer (property varying layer) 36, a tunnel insulating layer 37 and a memory columnar semiconductor layer 38 are formed in a memory hole 34. In the peripheral circuit area, a source/drain area 101B of a planer type transistor is formed in a p-type area 101A, and a plurality of dummy wiring layers 100 are formed on the same plane as each of a plurality of conductive layers of the memory cell area and electrically separated from the conductive layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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