发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a simplified configuration and including a data transfer circuit capable of reducing latency. SOLUTION: The semiconductor storage device includes a read clock generation control circuit 110, first to fourth amplification circuits 101<SB>1</SB>to 101<SB>4</SB>which amplify data read from first to fourth addresses, based on the clock, a first multiplexer (hereinafter referred to as MUX) 102<SB>1</SB>which selects and outputs first and second input data corresponding to even-numbered addresses, a second MUX 102<SB>2</SB>which selects and outputs third and fourth input data corresponding to odd-numbered addresses, latch circuits 103<SB>1</SB>and 103<SB>2</SB>for second and fourth output data, a third MUX 105<SB>1</SB>which outputs the first and third input data in an order in which the data has been read, a fourth MUX 105<SB>2</SB>which outputs second and fourth input data in an order in which the data has been read, first and second registers which receive outputs of the third and fourth MUXs, and a fifth MUX 108 which outputs a total of four outputs of the first and second registers in synchronization with both edges of a clock signal. COPYRIGHT: (C)2010,JPO&amp;INPIT
申请公布号 JP2009224022(A) 申请公布日期 2009.10.01
申请号 JP20090128631 申请日期 2009.05.28
申请人 ELPIDA MEMORY INC 发明人 FUJISAWA HIROKI
分类号 G11C11/4096;G11C11/407;G11C11/4076 主分类号 G11C11/4096
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