NON-VOLATILE MEMORY DEVICE

摘要

A finFET-based non-volatile memory device on a semiconductor substrate includes source and drain regions, a fin body, a charge trapping stack and a gate. The fin body extends between the source and the drain region as a connection. The charge trapping stack covers a portion of the fin body and the gate covers the charge trapping stack at the location of the fin body. The fin body has a corner-free shape for at least ¾ of the circumference of the fin body which lacks distinct crystal faces and transition zones in between the crystal faces.