OXIDE SEMICONDUCTOR THIN FILM AND FABRICATION METHOD THEREOF

摘要

PURPOSE: An oxide semiconductor thin film and a manufacturing method are provided to lower the whole manufacturing cost using the solution base process. CONSTITUTION: An oxide semiconductor thin film is comprised of ZnO 100 mole and Ga2O3 10 ~ 130 mole and In2O3 10 ~ 150 mole. The oxide thin film is obtained by thermally treating the precursor solution including Zn, and Ga and In. The mobility of the oxide thin film is 0.5 cm^2 / V·s or greater. The on/off ratio of the oxide thin film is 105 or greater.