| 摘要 |
PURPOSE: A semiconductor device and method for manufacturing the same are provided to prevent the short of the semiconductor device and corruption of a gate line. CONSTITUTION: The semiconductor device includes the protecting pattern(110) the semiconductor substrate(100), the pattern for preventing a slope of gate line and the gate line(120). The semiconductor substrate has the dummy cell region. The semiconductor substrate includes the active area(104) segmented by the device isolation film within the dummy cell region. The gate lines are formed on the semiconductor substrate including the dummy cell region. The pattern for preventing a slope of gate line is formed between the gate lines which is disposed at the outer side of the dummy cell region for gate lines.
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