| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high productivity, and a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device 1a includes a support substrate 10, a plurality of wiring lines 12 disposed selectively on the principal surface of the support substrate 10, semiconductor elements 20a and 20b mounted on the support substrate 10, a semiconductor element 21 which controls at least one of those semiconductor elements 20a and 20b, and a wiring support base 30 where a plurality of conductive patterns 40 are selectively disposed. Then the semiconductor elements 20a and 20b and semiconductor element 21, or the semiconductor elements 20a and 20 or semiconductor element 21 and wiring lines 12 are electrically connected through at least one conductive pattern 40. With such a configuration, the semiconductor device whose productivity is high and which is thin and compact can be achieved. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
