| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device having a vertical power element capable of preventing side electric discharge from occurring. SOLUTION: A conductive layer 9 is formed so that it covers the end face of a semiconductor chip, namely, it is in contact with a back surface electrode 7, entirely covers the end face of an n<SP>+</SP>-type substrate 1 and an n<SP>-</SP>-type drift layer 2, and reaches a passivation film 6. As a result of this, isopotential is attained instantaneously by the conductive layer 9, even if a high voltage is applied to a Schottky electrode 4 and potential is biased at the outer-periphery section of the semiconductor chip. Hence, side electric discharge is made less apt to occurring, and element destruction caused by the side electric discharge is restrained. COPYRIGHT: (C)2010,JPO&INPIT |
