| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an electrode structure of an n-type GaAs-based semiconductor that reduces diffusion of Ga atoms and As atoms to an electrode surface, and to provide a semiconductor device having the electrode structure. Ž<P>SOLUTION: The electrode structure includes an ohmic metal layer 11 which is made of a compound containing Au and Ge, and provided on an n-type GaAs semiconductor substrate 10, a first Pt layer 13 provided on the ohmic metal layer 11, and a Ti layer 14 provided on the first Pt layer 13. The Ti layer 14 prevents Ga atoms and As atoms from being diffused to the electrode surface. The first Pt layer prevents Ti atoms of the Ti layer 14 from being diffused to an Au electrode layer 12 and ohmic metal layer 11. Consequently, a diffusion preventing function of the Ti layer 14 is maintained. Therefore, the diffusion of Ga atoms and As atoms to the electrode surface is reduced. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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