| 摘要 |
A phase change memory device includes a semiconductor substrate, a plurality of bottom electrodes formed on the substrate, a plurality of phase change structures formed on the semiconductor substrate, each respectively contacting one of the bottom electrodes, and each having a phase change material layer and a top electrode stacked one upon the other, and a protective layer formed to a substantially uniform thickness on surfaces of the plurality of phase change structures and the semiconductor substrate, wherein the protective layer contains diffusion barrier ions.
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