发明名称 |
LASER ANNEALING METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.
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申请公布号 |
US2009246950(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20080275332 |
申请日期 |
2008.11.21 |
申请人 |
KIM JAE SOO;PARK CHEOL HWAN;CHO HO JIN |
发明人 |
KIM JAE SOO;PARK CHEOL HWAN;CHO HO JIN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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