发明名称 |
FILM FORMING METHOD, FILM FORMING APPARATUS AND STORAGE MEDIUM |
摘要 |
<p>Provided is a film forming method wherein a thin film is formed at a first temperature on a subject to be processed, by using a film forming apparatus which is provided with a process container which can be brought into a vacuum state by releasing air, an aluminum nitride placing table which is arranged in the process container for placing the subject thereon, a heating section for heating the subject, and a shower head section which is arranged to face the placing table and has a shower head section for introducing a gas into the process container. The film forming method includes a cleaning step of cleaning the inside of the process container at a second temperature, which is lower than the first temperature, by using a cleaning gas containing a fluorine gas; a modification step of maintaining the temperature at a third temperature which is at the second temperature or lower and modifying an AlF substance generated on the placing table by introducing a nitride gas into the process container; a pre-coat step of forming a pre-coat film in the process container by increasing the temperature of the placing table to the first temperature; and a film forming step of forming a thin film on the subject at the first temperature.</p> |
申请公布号 |
WO2009119177(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
WO2009JP52397 |
申请日期 |
2009.02.13 |
申请人 |
TOKYO ELECTRON LIMITED;YAMASAKI, HIDEAKI;WAKABAYASHI, SATOSHI |
发明人 |
YAMASAKI, HIDEAKI;WAKABAYASHI, SATOSHI |
分类号 |
C23C16/44;H01L21/28;H01L21/285 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|