| 摘要 |
PURPOSE: A semiconductor device, an electro-optical device and an electronic device are provided to reduce the generation of cracks in a basic insulation film although mechanical and thermal stress is applied to the semiconductor device. CONSTITUTION: A semiconductor device is formed on a resin layer(S) and includes a plurality of lower gate-type thin film transistors. A lower gate-type thin film transistor comprises a semiconductor layer(17), the first lines(GL1,GL2), the second line(SL), the first insulation layer(15), and a gate insulating layer(19). The first insulation layer and gate insulating layer are placed at lower parts of the semiconductor layer and the first and second lines.
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