| 摘要 |
<p>PURPOSE: A flash memory device is provided to suppress the lateral migration of the charge storage layer by increasing the side channel distance of the electric charge. CONSTITUTION: The flash memory device includes the semiconductor substrate(100), the pin(100a) for a channel, the first element isolation film(120), the tunnel insulating layer(130), the charge storage insulator(140), the second element isolation film(150), the blocking insulation film(170), and the gate electrode(180). The trench(110) is formed in the semiconductor substrate. The pin for channel is perpendicularly extended from the semiconductor substrate between trenches. The first element isolation films are formed in the trench bottom. The tunnel insulating layer is formed along the surface of the exposed pin for the first element isolation films and the channel. The charge storage insulator is formed along the surface of the tunnel insulating layer. The second element isolation films are formed on the charge storage insulator of the trench. The blocking insulation film is formed along the surface of the second element isolation films and the exposed charge storage insulator. The gate electrode is formed on the blocking insulation film.</p> |
