发明名称 FLASH MEMORY DEVICE AND CIRCUIT OF SELECTING BLOCK THE SAME
摘要 PURPOSE: A flash memory device and a block selecting circuit thereof are provided to reduce a chip size of a flash memory device by reducing the number of devices for forming a block selecting circuit. CONSTITUTION: A flash memory device includes a memory cell block(311), a control part, and a block selecting circuit. In the memory cell block, memory cells, drain selecting transistors and source selecting transistors are connected with a string structure. The control part includes an address counter. The address counter generates and outputs a block address signal using an input address signal in order to select a memory cell block. The block selecting circuit controls the drain selecting transistors and the source selecting transistors in response to the block address signal. The block selecting circuit enables or disables the memory cell block.
申请公布号 KR20090103328(A) 申请公布日期 2009.10.01
申请号 KR20080028863 申请日期 2008.03.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, YOUNG SU
分类号 G11C16/34;G11C16/06;G11C16/08;G11C29/00 主分类号 G11C16/34
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