| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, wherein high luminance is attained by reducing reflected light on a boundary surface between a compound semiconductor element and a light-transmissive sealing material so as to improve light extraction efficiency, and deterioration, such as discoloration, of the electrode surface is prevented by suppressing reaching, to an electrode surface, of an oxidative gas and sulfur from air passing through the light-transmissive sealing material so as to have a longer life. <P>SOLUTION: After the compound semiconductor element is mounted on an electrode, the compound semiconductor element is electrically connected by using wire bonding etc. Then a gas barrier type transparent thin film layer which has a refractive index smaller than the refractive index of the compound semiconductor element and larger than the refractive index of the light-transmissive sealing material is formed on the compound semiconductor element and electrode by using vacuum thin-film formation technique such as sputtering, CVD, etc. <P>COPYRIGHT: (C)2010,JPO&INPIT |
