| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an aqueous dispersion for chemical mechanical polishing which has both a high polishing speed and high flattening characteristics and reduces metal contamination of a wafer without causing a defect on a metal film nor insulating film, and to provide a chemical polishing method using the aqueous dispersion. <P>SOLUTION: The aqueous dispersion for chemical mechanical polishing contains (A) silica particles and (B) an organic acid. The silica particles (A) have such a chemical property that the number of silanol groups as calculated based on the signal area of the<SP>29</SP>Si-NMR spectrum is within the range from 2.0×10<SP>21</SP>to 3.0×10<SP>21</SP>groups/g. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
