| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metal oxide thin film capable of forming a thin film being reduced in the variation of surface resistance or the like, by using a plasma processing. SOLUTION: The method for forming the film of the metal oxide for forming the metal oxide thin film on a substrate comprises a step of forming a coating film containing a metal salt by applying a liquid material containing the metal salt to the substrate and a step of performing plasma processing to the coating film, in which, more preferably, the liquid material containing at least one selected from zinc and indium is used as the liquid material containing the metal salt. COPYRIGHT: (C)2010,JPO&INPIT
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