SINTERED SILICON WAFER

摘要

Disclosed is a sintered silicon wafer which is characterized by having a maximum crystal grain size of not more than 20 µm, an average crystal grain size of not less than 1 µm but not more than 10 µm, a volume ratio of silicon oxide contained in the wafer of not less than 0.01% but not more than 0.2%, a volume ratio of silicon carbide of not less than 0.01% but not more than 0.15%, and a volume ratio of metal silicides of not more than 0.006%. The sintered silicon wafer has a certain strength even when the wafer has a large diameter, and has mechanical properties and smoothness equal or quite similar to those of a single crystal silicon.