发明名称 |
SEMICONDUCTOR LIGHT SOURCE |
摘要 |
PURPOSE: A semiconductor light source is provided to minimize the effect of static electricity and generation of heat caused by current crowding. CONSTITUTION: A semi-conductor light source(100) includes the substrate(110), the semiconductor layer(120), the first electrode(161), the active layer(130), the second semiconductor layer(140), the transparent electrode(150), and the second electrode(162). The semiconductor layer is grown on a substrate. The first electrode is formed on the semiconductor layer. The active layer is formed on the semiconductor layer to expose the first electrode. The second semiconductor layers are grown on the active layer. The transparent electrode is formed on the second semiconductor layers. The second electrode is formed on the transparent electrode. The transparent electrode has the high resistance area. |
申请公布号 |
KR20090103386(A) |
申请公布日期 |
2009.10.01 |
申请号 |
KR20080028956 |
申请日期 |
2008.03.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HEO, DU CHANG;SHIM, JONG IN;LEE, JUNG KEE;JANG, DONG HOON |
分类号 |
H01L33/38;H01L33/36 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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