| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing an increase of dV/dt during reverse recovery, suppressing oscillation in a voltage current waveform during the reverse recovery, and simultaneously improving both of high-speed and low-loss characteristics and soft recovery characteristics. <P>SOLUTION: Normal process treatment is conducted to a bulk wafer 300 of FZ which contains phosphorus, is n-type, and has high specific resistance to form a p-anode layer 301 and an anode electrode 302 on one surface. Then, irradiation 303 of light ions such as protons is carried out. After the irradiation, cutting from a rear surface to a predetermined thickness is conducted. After the cutting, implantation 306 of ions of n-type impurity ions (impurities 307) such as phosphorus is carried out to a cut surface 305 of the rear surface, and thermal treatment is conducted to form an n-cathode layer 308 and form a cathode electrode 309 thereon. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
