| 摘要 |
PROBLEM TO BE SOLVED: To obtain high-accuracy formed first and second gate electrodes, and to obtain an element isolation region, having a width which is reduced in the gate breadthwise direction. SOLUTION: A first MIS transistor includes a first gate electrode 30A comprising a second metallic film 30a, formed on a first gate insulation film 13a and an insulation film 27, formed from a side face of the first gate electrode, across the upper surface of a region located sideways of the first gate electrode in a first active region 10a. A second MIS transistor includes a second gate electrode 30B, formed on a second gate insulating film 13b and comprising a first metal film 14b and a conductive film 30b, formed on the first metallic film, and the insulation film 27, formed from a side face of the second gate electrode, across an upper surface of a region located sideways of the second gate electrode in a second active region. The first and second metal films are made of metallic materials which differ from each other, and insulation film is not formed on the upper surfaces of the first and second gate electrodes. COPYRIGHT: (C)2010,JPO&INPIT
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