| 摘要 |
Provided is a system whose effective endurable number of rewrite times can be drastically improved in a storage device using a flash memory whose rewrite life is restricted. The logical address (LBA) of a sector in which data which is not used as a file system is accumulated is detected. Mapping information on a physical address (PBA) corresponding to the logical address is released. A block in which the mapping information on every logical address and physical address is released out of blocks of the flash memory is deleted and used as an alternative block for wear leveling.
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