| 摘要 |
A two step thin film deposition process is disclosed to provide for the simultaneous achievement of controlled stress and the achievement of preferred crystalline orientation in sputter-deposited thin films. In a preferred embodiment, a first relatively short deposition step is performed without substrate bias to establish the crystalline orientation of the deposited film followed by a second, typically relatively longer deposition step with an applied rf bias to provide for low or no stress conditions in the growing film. Sputter deposition without substrate bias has been found to provide good crystal orientation and can be influenced through the crystalline orientation of the underlying layers and through the introduction of intentionally oriented seed layers to promote preferred crystalline orientation. Conversely, sputter deposition with substrate bias has been found to provide a means for producing stress control in growing films.
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