发明名称 |
Verfahren zur Herstellung einer Halbleiteranordnung mit gemischter Orientierung |
摘要 |
A method of making a semiconductor device begins with a semiconductor wafer that includes a first semiconductor layer overlying a second semiconductor layer. A first trench is etched in the semiconductor wafer. The first trench is filled with insulating material. A second trench is etched within the first trench and through the insulating material, such that insulating material remains along sidewalls of the first trench. The second trench exposes a portion of the second insulating layer. A semiconductor layer can then be grown within the second trench using the second semiconductor layer as a seed layer. |
申请公布号 |
DE102006060887(B4) |
申请公布日期 |
2009.10.01 |
申请号 |
DE20061060887 |
申请日期 |
2006.12.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SHUM, DANNY PAK-CHUM;TILKE, ARMIN;YAN, JIANG |
分类号 |
H01L21/8238;H01L21/762;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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