发明名称 PROCESS FOR PRODUCING MONOATOMIC FILM
摘要 <p>In a surface of a substrate comprising a chemically dissoluble metal or metal compound, a surface of a single crystal of the metal or metal compound is formed in which atoms constituting the metal or metal compound have been regularly arranged. This surface of the single crystal is used as a template, and a monoatomic film is formed on the single-crystal surface by the chemical vapor deposition (CVD) method in which a raw-material gas is brought into contact with the single-crystal surface. After the monoatomic film has been formed on the single-crystal surface of the substrate, this substrate is chemically dissolved away, whereby the monoatomic film is isolated. According to this process, a monoatomic film having a thickness corresponding to one atom, such as a graphene film or h-BN film, can be stably produced with satisfactory reproducibility. A monoatomic film having a far larger area than conventional ones and having satisfactory quality can be produced.</p>
申请公布号 WO2009119641(A1) 申请公布日期 2009.10.01
申请号 WO2009JP55905 申请日期 2009.03.25
申请人 WASEDA UNIVERSITY;OSHIMA, CHUHEI 发明人 OSHIMA, CHUHEI
分类号 C23C16/01;B82B3/00;C01B31/04 主分类号 C23C16/01
代理机构 代理人
主权项
地址