Punch-through-trend reducing method for semiconductor device, involves forming doped region adjacent to another doped region with dopant e.g. antimony, where doped regions are electrically isolated against each other

摘要

The method involves forming a doped region (2) with dopant e.g. antimony, of conductivity i.e. n-type conductivity, type. Another dopant e.g. boron, of another conductivity i.e. p-type conductivity, type is implanted in the region. Temperature is increased for effectuating diffusion of the dopants. Dopant concentrations are adjusted such that the former conductivity type outbalances in the region after diffusion. A doped region (3) is formed adjacent to the region (2). The latter type of conductivity outbalances in the region (3). The regions are electrically isolated against each other. An independent claim is also included for a semiconductor device comprising a substrate.