| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent atmospheric gas from being entrained or to prevent processing gas from leaking to the outside of a system in etching treatment of silicon. Ž<P>SOLUTION: A spout 21 for jetting processing gas, and an opening 22 for sucking gas are formed while spaced apart in the moving direction (a) in the surface 23 of a nozzle head 20 facing a processed article 9. The processed article 9 is moved in the moving direction (a) relative to the nozzle head 20 along a virtual plane PL which faces the facing surface 23 in parallel therewith. A gas shield projection 24a is provided at the end of the nozzle head 20 in the moving direction (a). The gas shield projection 24a projects from the facing surface 23 to the side of the virtual plane PL and extends along the virtual plane PL in the direction intersecting the moving direction (a). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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