发明名称 |
SHALLOW TRENCH CAPACITOR COMPATIBLE WITH HIGH-K / METAL GATE |
摘要 |
Forming a shallow trench capacitor in conjunction with an FET by forming a plurality of STI trenches; for the FET, implanting a first cell well having a first polarity between a first and a second of the STI trenches; for the capacitor, implanting a second cell well having a second polarity in an area of a third of the STI trenches; removing dielectric material from the third STI trench; forming a gate stack having a first portion located between the first and the second of the STI trenches and a second portion located over and extending into the third trench; and performing a source/drain implant of the same polarity as the second cell well, thereby forming a FET in the first cell well, and a capacitor in the second cell well. The second polarity may be opposite from the first polarity. An additional implant may reduce ESR in the second cell well.
|
申请公布号 |
US2009242953(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20080059174 |
申请日期 |
2008.03.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;BRODSKY MARYJANE;CHENG KANGGUO;PEI CHENGWEN |
分类号 |
H01L27/108;G06F17/50;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|