发明名称 |
SEASONING METHOD FOR FILM-FORMING APPARATUS |
摘要 |
A seasoning method for a film-forming apparatus configured to form a silicon nitride film on a substrate placed in a process chamber. The method is conducted for reducing particles in the apparatus. The method comprises executing the plasma cleaning of the process chamber to remove a film deposited on the inner wall thereof (step S1), subsequently depositing an amorphous silicon film (step S2), depositing thereon a silicon nitride film in which the nitrogen content gradually increases in the thickness direction (step S3), and keeping the inside of the process chamber being filled with a rare-gas plasma until film formation on the substrate is initiated (step S4).
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申请公布号 |
US2009242511(A1) |
申请公布日期 |
2009.10.01 |
申请号 |
US20070282475 |
申请日期 |
2007.02.19 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
SHIMAZU TADASHI;KAWANO YUICHI |
分类号 |
B44C1/22 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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